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Número de pieza | NTB25P06 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTB25P06, NVB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D2PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
• AEC Q101 Qualified − NVB25P06
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
−60
V
VGS
VGSM
"15
"20
V
Vpk
ID
IDM
PD
TJ, Tstg
27.5
80
120
−55 to
+175
A
Apk
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V,
IL(pk) = 20 A, L = 3 mH, RG = 25 W)
EAS 600 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.25
46.8
63.2
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in2).
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) TYP
65 mW @ −10 V
ID MAX
−27.5 A
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
4
2
1
3
D2PAK
CASE 418B
NTB
25P06G
AYWW
Drain
Gate
Source
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTB25P06T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
NVB25P06T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 4
1
Publication Order Number:
NTB25P06/D
1 page NTB25P06, NVB25P06
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
V
W
4
123
S
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005) M T B M
A
W
J
H
VARIABLE
CONFIGURATION
ZONE
L
M
R
M
N
L
U
M
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
INCHES
DIM MIN MAX
A 0.340 0.380
B 0.380 0.405
C 0.160 0.190
D 0.020 0.035
E 0.045 0.055
F 0.310 0.350
G 0.100 BSC
H 0.080 0.110
J 0.018 0.025
K 0.090 0.110
L 0.052 0.072
M 0.280 0.320
N 0.197 REF
P 0.079 REF
R 0.039 REF
S 0.575 0.625
V 0.045 0.055
MILLIMETERS
MIN MAX
8.64 9.65
9.65 10.29
4.06 4.83
0.51 0.89
1.14 1.40
7.87 8.89
2.54 BSC
2.03 2.79
0.46 0.64
2.29 2.79
1.32 1.83
7.11 8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14 1.40
P
L
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
16.155
8.38
2X
1.016
2X
3.504
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTB25P06.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTB25P06 | Power MOSFET ( Transistor ) | ON Semiconductor |
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