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PDF FSD200 Data sheet ( Hoja de datos )
| Número de pieza | FSD200 | |
| Descripción | Green Mode Fairchild Power Switch (FPSTM) | |
| Fabricantes | Fairchild Semiconductor | |
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www.fairchildsemi.com
FSD210, FSD200
Green Mode Fairchild Power Switch (FPSTM)
Features
• Single Chip 700V Sense FET Power Switch
• Precision Fixed Operating Frequency (134kHz)
• Advanced Burst-Mode operation Consumes under 0.1W
at 265Vac and no load (FSD210 only)
• Internal Start-up Switch and Soft Start
• Under Voltage Lock Out (UVLO) with Hysteresis
• Pulse by Pulse Current Limit
• Over Load Protection (OLP)
• Internal Thermal Shutdown Function (TSD)
• Auto-Restart Mode
• Frequency Modulation for EMI
• FSD200 does not require an auxiliary bias winding
Applications
• Charger & Adaptor for Mobile Phone, PDA & MP3
• Auxiliary Power for White Goods, PC, C-TV & Monitor
Description
The FSD200 and FSD210 are integrated Pulse Width Modu-
lators (PWM) and Sense FETs specially designed for high
performance off-line Switch Mode Power Supplies (SMPS)
with minimal external components. Both devices are mono-
lithic high voltage power switching regulators which com-
bine an LDMOS Sense FET with a voltage mode PWM
control block. The integrated PWM controller features in-
clude: a fixed oscillator with frequency modulation for re-
duced EMI, Under Voltage Lock Out (UVLO) protection,
Leading Edge Blanking (LEB), optimized gate turn-on/turn-
off driver, thermal shut down protection (TSD), temperature
compensated precision current sources for loop compensa-
tion and fault protection circuitry. When compared to a dis-
crete MOSFET and controller or RCC switching converter
solution, the FSD200 and FSD210 reduce total component
count, design size, weight and at the same time increase effi-
ciency, productivity, and system reliability. The FSD200
eliminates the need for an auxiliary bias winding at a small
cost of increased supply power. Both devices are a basic plat-
form well suited for cost effective designs of flyback convert-
ers.
PRODUCT
FSD210
FSD200
FSD210M
FSD200M
OUTPUT POWER TABLE
230VAC ±15%(3)
85-265VAC
Adapter(1)
Open
Frame(2)
Adapter(1)
Open
Frame(2)
5W 7W 4W 5W
5W 7W 4W 5W
5W 7W 4W 5W
5W 7W 4W 5W
Table 1. Notes: 1. Typical continuous power in a non-ven-
tilated enclosed adapter measured at 50°C ambient. 2.
Maximum practical continuous power in an open frame
design at 50°C ambient. 3. 230 VAC or 100/115 VAC with
doubler.
Typical Circuit
AC
IN
Vstr Drain
PWM
Vfb Vcc Source
DC
OUT
Figure 1. Typical Flyback Application using FSD210
AC
IN
Vstr Drain
PWM
Vfb Vcc Source
DC
OUT
©2004 Fairchild Semiconductor Corporation
Figure 2. Typical Flyback Application using FSD200
Rev.1.0.3
1 page  
FSD210, FSD200
Electrical Characteristics
(Ta=25°C unless otherwise specified)
Parameter
Sense FET SECTION
Drain-Source Breakdown Voltage
Startup Voltage (Vstr) Breakdown
Off-State Current
Symbol
BVDSS
BVSTR
IDSS
On-State Resistance
RDS(ON)
Rise Time
TR
Fall Time
TF
CONTROL SECTION
Output Frequency
FOSC
Output Frequency Modulation
FMOD
Feedback Source Current
IFB
Maximum Duty Cycle
DMAX
Minimum Duty Cycle
DMIN
UVLO Threshold Voltage (FSD200)
VSTART
VSTOP
UVLO Threshold Voltage (FSD210)
VSTART
VSTOP
Supply Shunt Regulator (FSD200)
VCCREG
Internal Soft Start Time
TS/S
BURST MODE SECTION
VBURH
Burst Mode Voltage
VBURL
Hysteresis
PROTECTION SECTION
Drain to Source Peak Current Limit
Current Limit Delay(1)
Thermal Shutdown Temperature (Tj)(1)
IOVER
TCLD
TSD
Shutdown Feedback Voltage
VSD
Feedback Shutdown Delay Current
Leading Edge Blanking Time(2)
IDELAY
TLEB
TOTAL DEVICE SECTION
Operating Supply Current (FSD200)
IOP
Operating Supply Current (FSD210)
IOP
Start Up Current (FSD200)
ISTART
Start Up Current (FSD210)
ISTART
Vstr Supply Voltage
Condition
VCC = 0V, ID = 100µA
VDS = 560V
Tj = 25°C, ID = 25mA
Tj = 100°C, ID = 25mA
VDS = 325V, ID = 50mA
VDS = 325V, lD = 25mA
Tj = 25°C
Tj = 25°C
Vfb = 0V
Vfb = 3.5V
Vfb = 0V
After turn on
After turn on
-
Tj = 25°C
Tj = 25°C
-
Vfb = 4.0V
Vcc = 7V
Vcc = 11V
Vcc = 0V
Vcc = 0V
Vcc = 0V
Min. Typ. Max.
700 -
-
700 -
-
- - 100
- 28 32
- 42 48
- 100 -
- 50 -
126 134 142
- ±4 -
0.22 0.25 0.28
60 65 70
000
6.3 7 7.7
5.3 6 6.7
8.0 8.7 9.4
6.0 6.7 7.4
-7-
-3-
0.58
0.5
-
0.64
0.58
60
0.7
0.64
-
0.275
-
125
3.5
3
200
0.320
220
145
4.0
5
-
0.365
-
160
4.5
7
-
- 600 -
- 700 -
- 1 1.2
- 700 900
20 -
-
Unit
V
V
µA
Ω
Ω
ns
ns
kHz
kHz
mA
%
%
V
V
V
V
V
ms
V
V
mV
A
ns
°C
V
µA
ns
µA
µA
mA
µA
V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. This parameter is derived from characterization
5
5 Page 
standby mode.
OSC
4
Vfb
5uA
250uA
SQ
R
GATE
DRIVER
on/off
0.64V
/0.58V
FSD2xx
Burst Operation Block
Figure 12. Circuit for burst operation
Vo
Voset
VFB
0.64V
0.58V
Ids
FSD210, FSD200
Internal
Oscillator
Drain to
Source
voltage
138kHz
Drain to
Source
current
Vds
Waveform
130kHz
134kHz
138kHz
8kHz
Turn-on
Turn-off
point
Figure 14. Frequency Modulation Waveforms
CISPR22Q(PK)
CISPR22A(AV)
Vds
time
Figure 13. Burst mode operation
7. Frequency Modulation : EMI reduction can be accom-
plished by modulating the switching frequency of a SMPS.
Frequency modulation can reduce EMI by spreading the
energy over a wider frequency range. The amount of EMI
reduction is directly related to the level of modulation
(Fmod) and the rate of modulation. As can be seen in Figure
14, the frequency changes from 130kHz to 138kHz in 4mS
for the FSD200/FSD210. Frequency modulation allows the
use of a cost effective inductor instead of an AC input mode
choke to satisfy the requirements of world wide EMI limits.
Frequency(MHz)
Figure 15. FSDH0165 Full Range EMI scan(100kHz, no
Frequency Modulation) with charger set
CISPR22Q(PK)
CISPR22A(AV)
Frequency(MHz)
Figure 16. FSD210 Full Range EMI scan(134kHz, with Fre-
quency Modulation) with charger set
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet FSD200.PDF ] | |
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