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Numéro de référence | C1923 | ||
Description | NPN Transistor - 2SC1923 | ||
Fabricant | Toshiba Semiconductor | ||
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1 Page
2SC1923
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC1923
High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications
Unit: mm
· Small reverse transfer capacitance: Cre = 0.7 pF (typ.)
· Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
40
30
4
20
4
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
ICBO
IEBO
VCB = 18 V, IE = 0
VEB = 4 V, IC = 0
hFE
VCE = 6 V, IC = 1 mA
(Note)
Cre
fT
Cc・rbb’
NF
Gpe
VCE = 6 V, f = 1 MHz
VCE = 6 V, IC = 1 mA
VCE = 6 V, IE = -1 mA, f = 30 MHz
VCE = 6 V, IE = -1 mA, f = 100 MHz,
Figure 1
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max)
Min Typ. Max Unit
¾ ¾ 0.5 mA
¾ ¾ 0.5 mA
40 ¾ 200
¾ 0.70 ¾
pF
¾ 550 ¾ MHz
¾ ¾ 30 ps
¾ 2.5 4.0* dB
15 18 ¾ dB
1 2003-03-19
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Pages | Pages 7 | ||
Télécharger | [ C1923 ] |
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