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PDF NP60N04KUG Data sheet ( Hoja de datos )
| Número de pieza | NP60N04KUG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N04KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N04KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP60N04KUG
TO-263 (MP-25ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 6.1 mΩ MAX. (VGS = 10 V, ID = 30 A)
• Low Ciss: Ciss = 3400 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±60
±240
1.8
88
175
−55 to +175
30
90
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch(peak) ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.71
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16861EJ3V0DS00 (3rd edition)
Date Published April 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
9
8
7
6
5
4
3 VGS = 10 V
2 ID = 30 A
1 Pulsed
0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
tr
td(on)
10 tf
1
0.1
1000
100
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10 VGS = 10 V 0 V
1
0.1
0.01
0
0.4 0.8 1.2 1.6
VF(S-D) - Source to Drain Voltage - V
2.0
NP60N04KUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1 MHz
100
0.1
1
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
8V
VGS
10
8
6
4
2
VDS
ID = 60 A
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/µs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D16861EJ3V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NP60N04KUG.PDF ] | |
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