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PDF FDB8444_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDB8444_F085 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2010
FDB8444_F085
N-Channel PowerTrench® MOSFET
40V, 70A, 5.5mΩ
Features
Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A
Typ Qg(TOT) = 91nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
AD FREE I
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
D
G
S
©2010 Fairchild Semiconductor Corporation
FDB8444_F085 Rev C (W)
1
www.fairchildsemi.com
1 page  
Typical Characteristics
1000
100
10us
100us
10
SINGLE PULSE
TJ = MAX RATED
1ms
1 TC = 25oC
OPERATION IN THIS
AREA MAY BE
10ms
0.1 LIMITED BY rDS(on)
1
10
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
140
PULSE DURATION = 80μs
120 DUTY CYCLE = 0.5% MAX
VDD = 5V
100
80 TJ = 175oC
60
TJ = 25oC
40 TJ = -55oC
20
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
140
120
VGS = 10V
VGS = 5V
VGS = 4.5V
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80
60 VGS = 4V
40
20
VGS = 3.5V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
14
12
ID = 70A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
10
8 TJ = 175oC
6
4
TJ = 25oC
2
4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.0
PULSE DURATION = 80μs
1.8 DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 70A
VGS = 10V
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8444_F085 Rev C (W)
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDB8444_F085.PDF ] | |
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