|
|
PDF IRFL024ZPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFL024ZPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFL024ZPbF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
thisdesign area150°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
iContinuous Drain Current, VGS @ 10V (Silicon Limited)
iContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
iPower Dissipation
jPower Dissipation
iLinear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
iRθJA Junction-to-Ambient (PCB mount, steady state)
jRθJA Junction-to-Ambient (PCB mount, steady state)
www.irf.com
PD - 95312A
IRFL024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 57.5mΩ
S ID = 5.1A
SOT-223
Max.
5.1
4.1
41
2.8
1.0
0.02
± 20
13
32
See Fig.12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
Max.
45
120
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/16/10
1 page  
6
5
4
3
2
1
0
25
50 75 100 125
TA ,Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
IRFL024ZPbF
2.0
ID = 3.1A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 5.0477 0.000463
τ3τ3 19.9479 0.636160
20.0169 21.10000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFL024ZPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFL024ZPbF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |