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Número de pieza | NVD6416ANL | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTD6416ANL, NVD6416ANL
N-Channel Power MOSFET
100 V, 19 A, 74 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS ±20 V
Continuous Drain
Current
Steady
State
TC = 25°C
TC = 100°C
ID
19 A
13
Power Dissipation
Steady TC = 25°C
State
PD
71 W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
TJ, Tstg
70
−55 to
+175
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 18.2 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS 19 A
EAS 50 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) − Steady State
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
2.1 °C/W
47
http://onsemi.com
V(BR)DSS
100 V
RDS(on) MAX
74 mW @ 10 V
ID MAX
19 A
D
G
S
4
4
12
3
DPAK
CASE 369AA
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
1
Gate
2
Drain
3
Source
1
Gate
2
Drain
A = Assembly Location*
Y = Year
WW = Work Week
6416ANL = Device Code
G = Pb−Free Package
3
Source
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
NTD6416ANL/D
1 page NTD6416ANL, NVD6416ANL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10
10%
5%
1 2%
1%
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
P(pk)
RqJA(t) = r(t) RqJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) RqJA(t)
DUTY CYCLE, D = t1/t2
0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
Figure 13. Thermal Response (NTD6416ANL DPAK PCB Cu Area 720 mm2 PCB Cu thk 2 oz)
ORDERING INFORMATION
Device
Package
Shipping†
NTD6416ANLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6416ANL−1G
IPAK
(Pb−Free)
75 Units / Rail
NVD6416ANLT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NVD6416ANL.PDF ] |
Número de pieza | Descripción | Fabricantes |
NVD6416AN | N-Channel Power MOSFET / Transistor | ON Semiconductor |
NVD6416ANL | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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