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PDF NVF3055-100 Data sheet ( Hoja de datos )
| Número de pieza | NVF3055-100 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTF3055-100,
NVF3055-100
Power MOSFET
3.0 Amps, 60 Volts
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• AEC−Q101 Qualified and PPAP Capable − NVF3055−100
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 10 MW)
VDGR
60
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
VGS ± 20
± 30
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp ≤ 10 ms)
ID 3.0
ID 1.4
IDM 9.0
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD
2.1
1.3
0.014
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55
to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJA
RqJA
TL
74 mJ
°C/W
72.3
114
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 sq in).
http://onsemi.com
3.0 A, 60 V
RDS(on) = 110 mW
N−Channel
D
G
4
12
3
SOT−223
CASE 318E
STYLE 3
S
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AWW
3055 G
G
123
Gate Drain Source
A = Assembly Location
WW = Work Week
3055 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTF3055−100T1G SOT−223
(Pb−Free)
1000 / Tape &
Reel
NTF3055−100T3G SOT−223
(Pb−Free)
4000 / Tape &
Reel
NVF3055−100T1G SOT−223
(Pb−Free)
1000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 4
1
Publication Order Number:
NTF3055−100/D
1 page  
NTF3055−100, NVF3055−100
10
1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01 0.1
1
t, TIME (s)
Figure 13. Thermal Response
10 100 1000
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVF3055-100.PDF ] | |
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