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Numéro de référence | LDTA115TLT1G | ||
Description | Bias Resistor Transistor | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
Limits
−50
−50
−5
Collector current
IC −100
Collector Power dissipation
Junction temperature
PC 200
Tj 150
Storage temperature
Tstg
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA115TLT1G A6U 100
- 3000/Tape & Reel
LDTA115TLT3G A6U 100
- 10000/Tape & Reel
LDTA115TLT1G
3
1
2
SOT–23
1
BASE
R1
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BVCEO
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
Collector-emitter saturation voltage
IEBO
VCE(sat)
DC current transfer ratio
hFE
Input resistance
R1
Transition frequency
fT ∗
∗Characteristics of built-in transistor
Min. Typ. Max. Unit
Conditions
−50 − − V IC= −50µA
−50 − − V IC= −1mA
−5 − − V IE= −50µA
−
−
−0.5
µA VCB= −50V
−
−
−0.5
µA VEB= −4V
− − −0.3 V IC/IB= −1mA/−0.1mA
100 250 600
− IC= −1mA , VCE= −5V
70 100 130 kΩ
−
− 250 − MHZ VCE= −10V , IE=5mA , f=100MHZ
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Pages | Pages 3 | ||
Télécharger | [ LDTA115TLT1G ] |
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