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Numéro de référence | LDTA114YLT3G | ||
Description | Bias Resistor Transistor | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
Limits
− 50
−40 to +5
− 70
− 100
200
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114YLT1G
A6D
10 47 3000/Tape & Reel
LDTA114YLT3G
A6D
10 47 10000/Tape & Reel
LDTA114YLT1G
3
1
2
SOT–23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
−1.4
−
−
−
68
7
3.7
−
Typ. Max. Unit
− −0.3
V
−−
−0.1 −0.3 V
− −0.88 mA
− −0.5 µA
−−−
10 13 kΩ
4.7 5.7
−
250 − MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−1mA
IO/II=−5mA/−0.25mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−5mA
−
−
VCE=−10V, IE=5mA, f=100MHz
1/3
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Pages | Pages 3 | ||
Télécharger | [ LDTA114YLT3G ] |
No | Description détaillée | Fabricant |
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