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Leshan Radio Company - Bias Resistor Transistor

Numéro de référence LDTA144ELT3G
Description Bias Resistor Transistor
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LDTA144ELT3G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities ca.n be achieved.
z We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Parameter
Output current
Power dissipation
Symbol
VCC
VI
IO
IC(Max.)
PD
Limits
50
40 to +10
30
100
200
Unit
V
V
mA
mW
Junction temperature
Storage temperature
Tj
Tstg
150
55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA144ELT1G
A6C
47 47 3000/Tape & Reel
LDTA144ELT3G
A6C
47 47 10000/Tape & Reel
°C
°C
LDTA144ELT1G
3
1
2
SOT–23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zExternal characteristics (Unit: mm)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
3.0
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI 68
Input resistance
R1 32.9
Resistance ratio
Transition frequency
R2/R1
fT
0.8
Characteristics of built-in transistor
Typ. Max. Unit
− −0.5
V
−−
0.1 0.3 V
− −0.18 mA
− −0.5 µA
−−−
47 61.1 k
1 1.2
250 MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.3V, IO=−2mA
IO / II=−10mA / 0.5mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−5mA
VCE=−10V, IE=5mA, f=100MHz
1/3

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