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PDF NTBV45N06 Data sheet ( Hoja de datos )
| Número de pieza | NTBV45N06 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTB45N06, NTBV45N06
Power MOSFET
45 Amps, 60 Volts
N−Channel D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
• AEC−Q101 Qualified and PPAP Capable − NTBV45N06
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
45
30
150
125
0.83
3.2
2.4
−55 to
+175
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
EAS
RRRqqqJJJCAA
TL
240 mJ
°C/W
1.2
46.8
63.2
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1
http://onsemi.com
45 AMPERES, 60 VOLTS
RDS(on) = 26 mW
N−Channel
D
G
S
4
12
D32PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
NTx
45N06G
AYWW
12 3
Gate Drain Source
NTx45N06
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTB45N06/D
1 page  
NTB45N06, NTBV45N06
1
Normalized to RqJC at Steady State
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to RqJA at
1″ square Cu Pad, Cu
Steady State,
Area 1.127 in2,
3 x 3 inch FR4 board
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t, TIME (s)
Figure 14. Thermal Response
http://onsemi.com
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| PDF Descargar | [ Datasheet NTBV45N06.PDF ] | |
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