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PDF NVD5862N Data sheet ( Hoja de datos )
| Número de pieza | NVD5862N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVD5862N
Power MOSFET
60 V, 5.7 mW, 98 A, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
Gate−to−Source Voltage
VGS
Continuous Drain Cur-
rent RqJC (Note 1)
Power Dissipation RqJC
(Note 1)
Continuous Drain Cur-
rent RqJA (Notes 1 & 2)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
Current Limited by
Package (Note 3)
TC = 25°C
Steady TC = 100°C
State TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
98
69
115
58
18
13
4.1
2.0
367
60
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C
175
Source Current (Body Diode)
IS 96 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 37 A, L = 0.3 mH, RG = 25 W)
EAS 205 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.3 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
37
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
60 V
RDS(on)
5.7 mW @ 10 V
ID
98 A
D
N−Channel
G
S
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
V5862N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 2
1
Publication Order Number:
NVD5862N/D
1 page  
NVD5862N
TYPICAL CHARACTERISTICS
10
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NVD5862N.PDF ] | |
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