NVTFS4C25N Datasheet PDF - ON Semiconductor
| Part Number | NVTFS4C25N | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
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NVTFS4C25N
Power MOSFET
30 V, 17 mW, 22 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C25NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Notes 1, 3, 5)
Power Dissipation RqJA
(Notes 1, 3, 5)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
Continuous Drain
Current RyJC
(Notes 1, 2, 4, 5)
Power Dissipation
RyJC (Notes 1, 2, 4, 5)
Steady
State
TC = 25°C
TC = 85°C
TC = 25°C
TC = 85°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ,
Tstg
30
±20
10.1
7.8
3.0
1.8
22.1
17.1
14.3
8.6
90
−55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 14 A
Single Pulse Drain−to−Source Avalanche Energy EAS 11.2 mJ
(TJ = 25°C, IL = 6.7 Apk, L = 0.5 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Psi (y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to a single case surface.
3. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad.
4. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
5. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
17 mW @ 10 V
26.5 mW @ 4.5 V
ID MAX
22 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S XXXX D
S AYWWG D
GGD
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 1
1
Publication Order Number:
NVTFS4C25N/D
|
| |
 
NVTFS4C25N
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
100
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
100
tr
10 td(off)
td(on)
tf
1
VDD = 15 V
ID = 15 A
VGS = 10 V
0.1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
NVTFS4C25N FBSOA
TC = 25°C, VGS = 10 V
10
QT
8
6
Qgs
4
Qgd
TJ = 25°C
2
VDD = 15 V
VGS = 10 V
ID = 20 A
0
0 2 4 6 8 10 12
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
10
8
TJ = 125°C
TJ = 25°C
6
4
2
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
10 0.01 ms
0.1 ms
1
1 ms
0.1 dc 10 ms
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
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