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PDF K2362 Data sheet ( Hoja de datos )
| Número de pieza | K2362 | |
| Descripción | MOSFET ( Transistor ) - 2SK2362 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A)
2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±10
A
Drain Current (pulse)*
ID (pulse) ±40
A
Total Power Dissipation (Tc = 25 ˚C) PT1 100 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 10 A
Single Avalanche Energy**
EAS 142 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4
4.7 MAX.
1.5
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
© 1995
1 page  
2SK2361/2SK2362
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.6
ID = 6 A
3A
1.2
0.8
0.4
0
–50
0
VGS = 10 V
50 100 150
Tch - Channel Temperature -˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100
Coss
Crss
10
1 10 100 1 000
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1.0
10 V
VGS = 0
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
1.0
0.1
VDS = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/us
VGS = 0
1 000
100
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 10 A
VDD = 400 V
VGS
14
300 250 V
125 V
12
10
200 8
6
100
VDS
4
2
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2362.PDF ] | |
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