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Leshan Radio Company - Bias Resistor Transistors

Numéro de référence LDTC144WLT3G
Description Bias Resistor Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LDTC144WLT3G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC144WLT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
Limits
50
10 to +40
30
100
200
150
55 to +150
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
Unit EMITTER
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144WLT1G
A8P
47 22 3000/Tape & Reel
LDTC144WLT3G
A8P
47 22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol Min.
VI(off)
VI(on)
VO(on)
II
4
IO(off)
GI
56
R1 32.9
R2/R1 0.37
fT
Typ.
0.1
47
0.47
250
Max. Unit
0.8
V
0.3 V
0.16 mA
0.5 µA
−−
61.1 k
0.57
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
IO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
IO=5mA, VO=5V
VCE=10V, IE= 5mA, f=100MHz
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