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Numéro de référence | LDTC114ELT1G | ||
Description | Bias Resistor Transistors | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
1 Page
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC114ELT1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
Limits
50
−10 to +40
50
100
200
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC114ELT1G
A8A
10 10 3000/Tape & Reel
LDTC114ELT3G
A8A
10 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
3
−
−
−
30
7
0.8
−
Typ.
−
−
0.1
−
−
−
10
1
250
Max.
0.5
−
0.3
0.88
0.5
−
13
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
−
−
VCE=10V, IE=−5mA, f=100MHz
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Pages | Pages 3 | ||
Télécharger | [ LDTC114ELT1G ] |
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