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Numéro de référence | IRFU2307ZPbF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 96191B
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
IRFR2307ZPbF
IRFU2307ZPbF
HEXFET® Power MOSFET
D
VDSS = 75V
G RDS(on) = 16mΩ
S ID = 42A
D-Pak
I-Pak
IRFR2307ZPbF IRFU2307ZPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
53
38
42
210
110
0.70
± 20
100
140
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.42
50
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/16/10
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Pages | Pages 11 | ||
Télécharger | [ IRFU2307ZPbF ] |
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