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Número de pieza | FDPF8N50NZU | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDPF8N50NZU (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FDP8N50NZU / FDPF8N50NZU
N-Channel MOSFET
500V, 6.5A, 1.2
February 2010
UniFET-IITM
tm
Features
• RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A
• Low Gate Charge ( Typ. 14nC)
• Low Crss ( Typ. 5pF)
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Description
This N-Channel enhancement mode power field effect transistors
are prod uced using F airchild's pro prietary, planar str ipe, DMOS
technology.
This advance t echnology ha s been especially t ailored to
minimize on-st ate r esistance, provide super ior switchin g
performance, and withst and high energy pulse in the avalanch e
and commutation mode. The se devices are well suit ed for hig h
efficient switching mode pow er supplies and active p ower factor
correction.
D
G
GDS
TO-220
FDP Series
GDS
TO-220F
FDPF Series
(potted)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
S
Symbol
Parameter
FDP8N50NZU FDPF8N50NZU Units
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
±25
6.5 6.5*
3.9 3.9*
26 26*
80
6.5
13
20
130 40
1 0.32
-55 to +150
300
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP8N50NZU FDPF8N50NZU Units
0.96 3.1
0.5 - oC/W
62.5 62.5
©2010 Fairchild Semiconductor Corporation
FDP8N50NZU / FDPF8N50NZU Rev. A
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP8N50NZU / FDPF8N50NZU Rev. A
5
www.fairchildsemi.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FDPF8N50NZU.PDF ] |
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