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PDF NVTFS4C08N Data sheet ( Hoja de datos )
| Número de pieza | NVTFS4C08N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVTFS4C08N
Power MOSFET
30 V, 5.9 mW, 55 A, Single N−Channel,
m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C08NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Notes 1, 2, 4)
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
17 A
TA = 100°C
12
Power Dissipation RqJA
(Note 1, 2, 4)
Continuous Drain
Current RqJC (Note 1,
3, 4)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
PD
ID
3.1 W
1.6
55
39 A
Power Dissipation
RqJC (Note 1, 3, 4)
TA = 25°C
TA = 100°C
PD
31 W
15
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
253 A
Operating Junction and Storage Temperature
TJ, −55 to °C
Tstg +175
Source Current (Body Diode)
IS 28 A
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, IL = 20 Apk, L = 0.1 mH)
EAS
20 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
(Notes 1 and 4)
Junction−to−Ambient – Steady State
(Notes 1 and 2)
RqJC
RqJA
4.9
°C/W
48
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2 2 oz. Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
5.9 mW @ 10 V
9.0 mW @ 4.5 V
ID MAX
55 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S XXXX D
S AYWWG D
GGD
4C08
08WF
A
Y
WW
G
= Specific Device Code for
NVMTS4C08N
= Specific Device Code of
NVTFS4C08NWF
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
Publication Order Number:
NVTFS4C08N/D
1 page  
NVTFS4C08N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10 20%
10%
5%
1 2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 12. Thermal Response
1
10 100 1000
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
ID (A)
Figure 13. GFS vs. ID
100
TJ(initial) = 25°C
10 TJ(initial) = 125°C
1
1.0E−06
1.0E−05
1.0E−04
1.E−03
TAV, TIME IN AVALANCHE (s)
Figure 14. Avalanche Characteristics
ORDERING INFORMATION
Device
Package
Shipping†
NVTFS4C08NTAG
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C08NWFTAG
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C08NTWG
WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS4C08NWFTWG
WDFN8
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVTFS4C08N.PDF ] | |
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