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NVMD6N04R2G fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NVMD6N04R2G
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NVMD6N04R2G fiche technique
NTMD6N04, NVMD6N04
Power MOSFET
40 V, 5.8 A, Dual NChannel SOIC8
Features
Designed for use in low voltage, high speed switching applications
Ultra Low OnResistance Provides
Higher Efficiency and Extends Battery Life
RDS(on) = 0.027 W, VGS = 10 V (Typ)
RDS(on) = 0.034 W, VGS = 4.5 V (Typ)
Miniature SOIC8 Surface Mount Package Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree and are RoHS Compliant
Applications
DCDC Converters
Computers
Printers
Cellular and Cordless Phones
Disk Drives and Tape Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current (Note 1)
Continuous @ TA = 25°C
Single Pulse (tp 10 ms)
Drain Current (Note 2)
Continuous @ TA = 25°C
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
ID
40
"20
5.8
29
4.6
V
V
Adc
Apk
Adc
PD
TJ, Tstg
2.0
1.29
55 to +150
W
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 40 Vdc, VGS = 5.0 Vdc,
Vdc, Peak IL = 7.0 Apk,
L = 10 mH, RG = 25 W)
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
EAS
RqJA
245 mJ
°C/W
62.5
97
Maximum Lead Temperature for
Soldering Purposes for 10 Sec
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1pad size, t 10 s
2. When surface mounted to an FR4 board using 1pad size, t = steady state
http://onsemi.com
VDSS
40 V
RDS(ON) Typ
27 mW @ VGS = 10 V
ID Max
5.8 A
NChannel
D
D
GG
SS
8
1
SOIC8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6N04
AYWW G
G
1
S1 G1 S2 G2
E6N04 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMD6N04R2G
NVMD6N04R2G*
SOIC8
(PbFree)
SOIC8
(PbFree)
2500 / Tape &
Reel
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 2
1
Publication Order Number:
NTMD6N04R2/D

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