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Numéro de référence | K2936 | ||
Description | Silicon N Channel MOS FET | ||
Fabricant | Renesas | ||
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1 Page
2SK2936
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1050-0400
(Previous: ADE-208-559B)
Rev.4.00
Sep 07, 2005
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
G
1. Gate
2. Drain
3. Source
12 3
S
Rev.4.00 Sep 07, 2005 page 1 of 7
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Pages | Pages 8 | ||
Télécharger | [ K2936 ] |
No | Description détaillée | Fabricant |
K2930 | MOSFET ( Transistor ) - 2SK2930 | Hitachi Semiconductor |
K2936 | MOSFET ( Transistor ) - 2SK2936 | Hitachi Semiconductor |
K2936 | Silicon N Channel MOS FET | Renesas |
K2937 | MOSFET ( Transistor ) - 2SK2937 | Renesas Technology |
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