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PDF NP60N03KUG Data sheet ( Hoja de datos )
| Número de pieza | NP60N03KUG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N03KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N03KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP60N03KUG
TO-263 (MP-25ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 30 A)
• Low Ciss: Ciss = 3500 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±240
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
Channel Temperature
PT2 88
Tch 175
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg −55 to +175
IAR 33
EAR 109
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch < 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.70
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16860EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
7
6
5
4
3
2 VGS = 10 V
ID = 30 A
1 Pulsed
0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 15 V
VGS = 10 V
RG = 0 Ω
1
0.1 1 10
ID - Drain Current - A
td(off)
tr
td(on)
tf
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF(S-D) - Source to Drain Voltage - V
NP60N03KUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
Crss
100
0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 24 V
15 V
6V
VGS
10
8
6
4
VDS
ID = 60 A
2
Pulsed
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
VGS = 0 V
di/dt = 100 A/µs
1 10
IF - Diode Forward Current - A
100
Data Sheet D16860EJ1V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NP60N03KUG.PDF ] | |
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