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Numéro de référence | LDTDG12GPWT1G | ||
Description | Bias Resistor Transistor | ||
Fabricant | LRC | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTDG12GPWT1G
zApplications
Driver
zFeatures
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A)
2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
• We declare that the material of product compliance with
RoHS requirements.
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
60±10
60±10
5
1
2 ∗1
0.5
2 ∗2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R
3
COLLECTOR
R=10kΩ
2
EMITTER
LDTDG12GPWT1G
Q7
1 22 3000/Tape & Reel
LDTDG12GPWT3G
Q7
1 22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
Min.
50
50
5
−
300
−
300
7
Transition frequency
fT ∗ −
∗ Characteristics of built-in transistor
Typ.
−
−
−
−
−
−
−
10
80
Max.
70
70
−
0.5
580
0.4
−
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=50µA
IC=1mA
IE=720µA
VCB=40V
VEB=4V
IC/IB=500mA/5mA
VCE=2V, IC=500mA
−
VCE=5V, IE=−0.1A, f=30MHz
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Pages | Pages 3 | ||
Télécharger | [ LDTDG12GPWT1G ] |
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