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Número de pieza | LDTB114GWT1G | |
Descripción | Bias Resistor Transistor | |
Fabricantes | LRC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LDTB114GWT1G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Each pin mounted on the recommended land
Symbol
VCBO
VCEO
VEBO
IC
Pd ∗
Tj
Tstg
Limits
−50
−50
−5
−500
200
150
−55 to +150
Unit
V
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB114GWT1G
S-LDTB114GWT1G
LDTB114GWT3G
S-LDTB114GWT3G
K7
K7
10 3000/Tape & Reel
10 10000/Tape & Reel
LDTB114GWT1G
S-LDTB114GWT1G
3
1
2
SOT–323 (SC–70)
1
BASE R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCEO
BVEBO
ICBO
Emitter cutoff curren
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Emitter-base resistance
R2
Transition frequency
fT ∗
∗Characteristics of built-in transistor
Min.
−50
−50
−5
−
−
−
56
7
−
Typ.
−
−
−
−
−
−
−
10
200
Max.
−
−
−
−0.5
−580
−0.3
−
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −720µA
VCB= −50V
VEB= −4V
IC/IB= −50mA/−2.5mA
IC= −50mA , VCE= −5V
−
VCE= −10V , IE=50mA , f=100MHz
Rev.O 1/3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet LDTB114GWT1G.PDF ] |
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