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Numéro de référence | LDTB123TWT3G | ||
Description | Bias Resistor Transistor | ||
Fabricant | LRC | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−40
−5
−500
200
150
−55 to +150
Unit
V
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB123TWT1G
S-LDTB123TWT1G
K1
2.2
3000/Tape & Reel
LDTB123TWT3G
S-LDTB123TWT3G
K1
2.2
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
LDTB123TWT1G
S-LDTB123TWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
Rev.O 1/3
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Pages | Pages 3 | ||
Télécharger | [ LDTB123TWT3G ] |
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