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IRF3704ZPbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF3704ZPbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3704ZPbF fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95463
IRF3704ZPbF
IRF3704ZSPbF
IRF3704ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 7.9m: 8.7nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3704Z
D2Pak
IRF3704ZS
TO-262
IRF3704ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiÃRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 12
www.irf.com
Max.
20
± 20
67 h
47 h
260
57
28
0.38
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
2.65
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
6/29/04

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