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PDF NP50P03YDG Data sheet ( Hoja de datos )
| Número de pieza | NP50P03YDG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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NP50P03YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0019EJ0200
Rev.2.00
Mar 16, 2011
Description
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
• Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No.
NP50P03YDG -E1-AY ∗1
NP50P03YDG -E2-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
<R>
<R>
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m50
m200
102
1.0
175
−55 to +175
24
58
Unit
V
V
A
A
W
W
°C
°C
A
mJ
<R>
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.47
150
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, L = 100 μH, VGS = −20 → 0 V
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R07DS0019EJ0200 Rev.2.00
Mar 16, 2011
Page 1 of 6
1 page  
NP50P03YDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
ID = −25 A
Pulsed
12
VGS = −5 V
9
6 −10 V
3
0
-100
0 100 200
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
10
1
-0.1
td(on)
tr
-1
VDD = −15 V
VGS = −10 V
RG =0 Ω
-10 -100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
-1000
-100
-10
VGS = −10 V
0V
-1
Pulsed
-0.1
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
100
Ciss
Coss
Crss
VGS = 0V
f = 1 MHz
10
-0.1 -1 -10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40
-35
-30
-25
-20
-15
-10
-5
-0
0
VDD = −24 V
−15 V
−6 V
VDS
20 40
-12
-10
VGS -8
-6
-4
ID = −50 A
60
-2
-0
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
-0.1
di/dt = −100 A/μs
VGS = 0 V
-1 -10 -100
IF - Drain Current - A
R07DS0019EJ0200 Rev.2.00
Mar 16, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP50P03YDG.PDF ] | |
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