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NP55N055SUG fiches techniques PDF

Renesas - MOS FIELD EFFECT TRANSISTOR

Numéro de référence NP55N055SUG
Description MOS FIELD EFFECT TRANSISTOR
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NP55N055SUG fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N055SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP55N055SUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP55N055SUG
TO-252 (MP-3ZK)
FEATURES
Channel temperature 175 degree rating
Super low on-state resistance
RDS(on) = 10 mMAX. (VGS = 10 V, ID = 28 A)
Low Ciss: Ciss = 3500 pF TYP.
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±55
±220
Total Power Dissipation (TC = 25°C)
PT1 77
Total Power Dissipation (TA = 25°C)
Channel Temperature
PT2 1.2
Tch 175
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg 55 to +175
IAR 27
EAR 73
Notes 1. PW 10 µs, Duty Cycle 1%
2. Tch < 150°C, VDD = 28 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.95
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16863EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004

PagesPages 6
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