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PDF NCV8570B Data sheet ( Hoja de datos )
| Número de pieza | NCV8570B | |
| Descripción | Linear Voltage Regulator | |
| Fabricantes | ON Semiconductor | |
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NCV8570B
200 mA, Ultra Low Noise,
High PSRR, LDO, Linear
Voltage Regulator
The NCV8570B is a 200 mA Low Dropout, Linear Voltage
Regulator with ultra low noise characteristics. It’s low noise combined
with high Power Supply Rejection Ratio (PSRR) make it especially
suited for use in RF, audio or imaging applications. The device is
manufactured in an advanced BiCMOS process to provide a powerful
combination of low noise and excellent dynamic performance but with
very low ground current consumption at full loads.
The NCV8570B is stable with small, low value capacitors allowing
designers to minimise the total PCB space occupied by the solution.
The device is packaged in a small 2x2.2mm DFN6 package as well as
in a TSOP-5 package.
Features
Ultra Low Noise (typ. 10 mVrms @ VOUT = 1.8 V)
Very High PSRR (typ. 82 dB @ 1 kHz)
Excellent Line and Load Regulation
Stable with Ceramic Output Capacitors as low as 1 mF
Very Low Ground Current (typ. 75 mA @ IOUT = 200 mA)
Low Sleep Mode Current (max. 1 mA)
Active Discharge Circuit
Current Limit and Thermal Shutdown Protection
Output Voltage Options:
1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V
Contact Factory for Other Voltage Options
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Applications
Satellite and HD Radio
Portable/Built−in DVD Entertainment Systems
Noise Sensitive Applications (RF, Video, Audio)
GPS Systems
Camera for Lane Change Detection and Reverse View
VIN
CIN
1 mF
DFN6 2x2.2
3 IN
1
ON
OFF
EN
NCV8570B
GND
OUT
BYP
4
6
2, 5, EPAD
VOUT
Cnoise
10 nF
COUT
1 mF
Figure 1. NCV8570B Typical Application Schematic
http://onsemi.com
DFN6
MN SUFFIX
CASE 506BA
TSOP−5
SN SUFFIX
CASE 483
PIN CONNECTIONS
EN 1
6 BYP
GND 2
IN 3
5 GND
4 OUT
DFN6
(Top View)
1
IN
5
OUT
GND
EN
BYP
TSOP−5
(Top View)
MARKING DIAGRAMS
1 XX MG
G
XX = Specific Device Code
M = Date Code
G = Pb−Free Package*
(*Note: Microdot may be in either location)
5
XXXAYWG
G
1
XXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package*
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 18 of this data sheet.
Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 3
1
Publication Order Number:
NCV8570B/D
1 page  
NCV8570B
TYPICAL CHARACTERISTICS
3.3660
3.3440
3.3220
3.3000
3.2780
3.2560
3.2340
−40
VIN = 3.8 V,
CIN = COUT = 1 mF,
Cnoise = 10 nF
−20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (C)
Figure 6. Output Voltage vs. Junction
Temperature, VOUT = 3.3 V
180
CIN = COUT = 1 mF,
150 Cnoise = 10 nF
120
TJ = 25C
90 TJ = 125C
60
TJ = −40C
30
0
0 40 80 120 160 200
IOUT, OUTPUT CURRENT (mA)
Figure 7. Dropout Voltage vs. Output Current,
VOUT = 2.8 V
180 CIN = COUT = 1 mF,
150 Cnoise = 10 nF
180
CIN = COUT = 1 mF,
150 Cnoise = 10 nF
120 TJ = 25C
90
TJ = 125C
60
30 TJ = −40C
120
TJ = 25C
90
TJ = 125C
60
30 TJ = −40C
0
0 40 80 120 160 200
IOUT, OUTPUT CURRENT (mA)
Figure 8. Dropout Voltage vs. Output Current,
VOUT = 3.0 V
0
0 40 80 120 160 200
IOUT, OUTPUT CURRENT (mA)
Figure 9. Dropout Voltage vs. Output Current,
VOUT = 3.3 V
http://onsemi.com
5
5 Page 
NCV8570B
TYPICAL CHARACTERISTICS
5.0
VIN = 4.5 V
VIN = 3.5 V
4.5
4.0
3.5
3.010
3.005
3.000
2.995
2.990
2.985
2.980
0
COUT = 1 mF, VIN = 3.5 V,
Cnoise = 100 nF, IOUT = 200 mA,
dVIN/dt = 1 V / 1 ms
20 40 60 80 100 120 140 160 180
t, TIME (ms)
Figure 33. Line Transient Response,
VOUT = 3.0 V, COUT = 1 mF, IOUT = 200 mA
200
5.7
VEN = 3.8 V
3.8
1.9
VEN = 0 V
Cnoise = 10 nF
4.0
0.0
3.0
2.0 Cnoise = 220 nF
1.0
0.0
−1.0
0
Cnoise = 100 nF
Cnoise = 47 nF
COUT = 1 mF,
VIN = 3.8 V
2 4 6 8 10 12 14
t, TIME (ms)
Figure 34. Turn−On Response
VOUT = 3.3 V, COUT = 1 mF, IOUT = 30 mA
16
5.25
VEN = 3.5 V
3.50
1.75
VEN = 0 V
0.00
4.0 Cnoise = 10 nF
3.0
2.0 Cnoise = 220 nF
1.0
0.0
−1.0
0
Cnoise
=
Cnoise
47 nF
=
100
nF
COUT
VIN =
=1
3.5
mF,
V
2 4 6 8 10 12 14 16
t, TIME (ms)
Figure 35. Turn−On Response
VOUT = 3 V, COUT = 1 mF, IOUT = 30 mA
http://onsemi.com
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet NCV8570B.PDF ] | |
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