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Numéro de référence | LDTA124EWT1G | ||
Description | Bias Resistor Transistor | ||
Fabricant | LRC | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Parameter
Output current
Symbol
VCC
VI
IO
IC(Max.)
Limits
−50
−40 to +10
−30
−100
Power dissipation
PD 200
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA124EWT1G
P4
22
22 3000/Tape & Reel
LDTA124EWT3G
P4
22
22 10000/Tape & Reel
Unit
V
V
mA
mW
°C
°C
LDTA124EWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zElectrical characteristics (T 25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT ∗
∗Characteristics of built-in transistor.
Min.
−
−3
−
−
−
56
15.4
0.8
−
Typ.
−
−
−0.1
−
−
−
22
1
250
Max.
−0.5
−
−0.3
−0.36
−0.5
−
28.6
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=−5V, IO=−100µA
VO=−0.2V, IO=−5mA
IO/II=−10mA/−0.5mA
VI=−5V
VCC=−50V, VI=0V
VO=−5V, IO=−5mA
−
−
VCE=−10V, IE=5mA, f=100MHz
1/3
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Pages | Pages 3 | ||
Télécharger | [ LDTA124EWT1G ] |
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