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Número de pieza | IRFU3711PbF | |
Descripción | SMPS MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFU3711PbF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! PD- 95073A
SMPS MOSFET
IRFR3711PbF
IRFU3711PbF
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l 100% RG Tested
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
6.5mΩ
ID
110A
D-Pak
IRFR3711
I-Pak
IRFU3711
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJC
RθJA
RθJA
Parameter
hJunction-to-Case
ghJunction-to-Ambient (PCB Mount)
hJunction-to-Ambient
Max
20
± 20
f100
69 f
440
2.5
120
0.96
-55 to +150
Typ
–––
–––
–––
Max
1.04
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through are on page 10
www.irf.com
1
1/7/05
1 page 120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR/U3711PbF
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFU3711PbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFU3711PbF | SMPS MOSFET | International Rectifier |
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