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Renesas Technology - Silicon N Channel Power MOS FET

Numéro de référence RJK0854DPB
Description Silicon N Channel Power MOS FET
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK0854DPB fiche technique
RJK0854DPB
80V, 25A, 13 mmax.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 10 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
Preliminary Datasheet
R07DS1055EJ0200
(Previous: REJ03G1883-0100)
Rev.2.00
Apr 11, 2013
5
D
SSS
123
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25C, Rg 50
3. Tc = 25C
Ratings
80
20
25
100
25
25
8.3
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1055EJ0200 Rev.2.00
Apr 11, 2013
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