DataSheetWiki


LDTC124GWT3G fiches techniques PDF

Leshan Radio Company - Bias Resistor Transistor

Numéro de référence LDTC124GWT3G
Description Bias Resistor Transistor
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





1 Page

No Preview Available !





LDTC124GWT3G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
55 to +150
Unit
V
V
V
mA
mW
C
C
LDTC124GWT1G
3
1
2
SOT–323 (SC–70)
1
BASE R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC124GWT1G H9
22 3000/Tape & Reel
LDTC124GWT3G H9
22 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
140
56
15.4
Typ.
22
250
Max.
0.5
260
0.3
28.6
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC= 50µA
IC= 1mA
IE= 330µA
VCB= 50V
VEB= 4V
IC= 10mA , IB= 0.5mA
IC= 5mA , VCE= 5V
VCE= 10V , IE= 5mA , f= 100MHz
1/3

PagesPages 3
Télécharger [ LDTC124GWT3G ]


Fiche technique recommandé

No Description détaillée Fabricant
LDTC124GWT3G Bias Resistor Transistor Leshan Radio Company
Leshan Radio Company

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche