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PDF LDTC143TWT1G Data sheet ( Hoja de datos )

Número de pieza LDTC143TWT1G
Descripción Bias Resistor Transistor
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LDTC143TWT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC143TWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(Max.)
PD
Tj
Tstg
50
50
5
100
200
150
55 to +150
V
V
mA
mW
°C
°C
3
1
2
SOT–323 (SC–70)
1
BASE
R1
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC143TWT1G
H2
4.7 -
3000/Tape & Reel
LDTC143TWT3G
H2
4.7 -
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
3.29
Typ.
250
4.7
250
Max.
0.5
0.5
0.3
600
6.11
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.25mA
IC=1mA, VCE=5V
VCE=10V, IE=−5mA, f=100MHz
1/3

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