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LDTC114YWT3G fiches techniques PDF

Leshan Radio Company - Bias Resistor Transistor

Numéro de référence LDTC114YWT3G
Description Bias Resistor Transistor
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LDTC114YWT3G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC114YWT1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
50
5
70
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC114YWT1G
8D
10 47 3000/Tape & Reel
LDTC114YWT3G 8D
10 47 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
1.4
68
7
3.7
Typ.
0.1
10
4.7
250
Max.
0.3
0.3
0.88
0.5
13
5.7
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=1mA
IO/II=5mA/0.25mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
VCE=10V, IE=−5mA, f=100MHz
1/3

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