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LDTC115EWT1G fiches techniques PDF

Leshan Radio Company - Bias Resistor Transistor

Numéro de référence LDTC115EWT1G
Description Bias Resistor Transistor
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LDTC115EWT1G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VI
IO
I C(Max.)
Pc
Tj
Tstg
Limits
50
10 to +40
20
100
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
LDTC115EWT1G
3
1
2
SOT–323 (SC–70)
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC115EWT1G
N6
100
100 3000/Tape & Reel
LDTC115EWT3G
N6
100
100 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT
Characteristics of built-in transistor
Min.
3
82
70
0.8
Typ. Max.
0.5
−−
0.1 0.3
0.15
0.5
−−
100 130
1 1.2
250
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=1mA
IO=5mA, II=0.25mA
VI=5V
VCC=50V, VI=0V
IO=5mA, VO=5V
VCE=10V, IE=−5mA, f=100MHz
1/2

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