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IRF7702PbF Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - Power MOSFET

شماره قطعه IRF7702PbF
شرح مفصل Power MOSFET
تولید کننده International Rectifier 
آرم International Rectifier 


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IRF7702PbF شرح
l Ultra Low On-Resistance
l -1.8V Rated
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
l Lead-Free
PD-96027
IRF7702PbF
VDSS
-12V
HEXFET® Power MOSFET
RDS(on) max
0.014@VGS = -4.5V
0.019@VGS = -2.5V
0.027@VGS = -1.8V
ID
-8.0A
-7.0A
-5.8A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
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The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
9'
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Max.
-12
±8.0
±7.0
±70
1.5
0.96
0.01
± 8.0
-55 to + 150
TSSOP-8
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
83
Units
°C/W
1
02/06/06

قانون اساسیصفحه 8
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