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Numéro de référence | IRFU4510PbF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97784
IRFR4510PbF
IRFU4510PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
11.1m
max.
13.9m
ID (Silicon Limited)
63A
S ID (Package Limited)
56A
D
D
S
G
DPak
IRFR4510PbF
S
D
G
IPAK
IRFU4510PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
RJC
RJA
Symbol
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 11
www.irf.com
Max.
63
45
56
252
143
0.95
± 20
-55 to + 175
300
127
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
1
05/02/12
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Pages | Pages 11 | ||
Télécharger | [ IRFU4510PbF ] |
No | Description détaillée | Fabricant |
IRFU4510PbF | Power MOSFET ( Transistor ) | International Rectifier |
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