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Numéro de référence | K2354 | ||
Description | MOSFET ( Transistor ) - 2SK2354 | ||
Fabricant | NEC | ||
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1 Page
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3.
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.5
A
Drain Current (pulse)*
ID(pulse) ±18
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
30 W
Total Power Dissipation (Ta = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.5 A
Single Avalanche Energy**
EAS 17.4 mJ
1 23
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source
Document No. TC-2499
(O. D. No. TC-8047)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
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Pages | Pages 8 | ||
Télécharger | [ K2354 ] |
No | Description détaillée | Fabricant |
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