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LDTB113ZET3G fiches techniques PDF

LRC - Bias Resistor Transistor

Numéro de référence LDTB113ZET3G
Description Bias Resistor Transistor
Fabricant LRC 
Logo LRC 





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LDTB113ZET3G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB113ZET1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IC
PD
Tj
Tstg
Limits
50
10 to +5
500
200
150
55 to +150
Unit
V
V
mA
mW
C
C
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ZET1G
K8
1 10 3000/Tape & Reel
LDTB113ZET3G
K8
1 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
3
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI 56
Input resistance
R1 0.7
Resistance ratio
R2/R1
8
Transition frequency
fT
Transition frequency of the device
Typ.
1
10
200
Max.
0.3
0.3
7.2
0.5
1.3
12
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
IO/II= 50mA/2.5mA
VI= 5V
VCC= 50V, VI=0V
VO= 5V, IO= 50mA
VCE= 10V, IE=50mA, f=100MHz
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