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LDTB143EET3G fiches techniques PDF

LRC - Bias Resistor Transistor

Numéro de référence LDTB143EET3G
Description Bias Resistor Transistor
Fabricant LRC 
Logo LRC 





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LDTB143EET3G fiche technique
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTB143EET1G
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
VCC
VIN
IC
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
Limits
50
30 to +10
500
200
150
55 to +150
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
Unit EMITTER
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB143EET1G
K6
4.7 4.7 3000/Tape & Reel
LDTB143EET3G
K9
4.7 4.7 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in tranasistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
47
3.29
0.8
Typ.
0.1
4.7
1
200
Max.
0.5
0.3
1.8
0.5
6.11
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/2.5mA
VI= −5V
VCC= −50V, VI=0V
VO= −5V, IO= −50mA
VCE= −10V, IE=50mA, f=100MHz
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