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PDF LDTD114EET1G Data sheet ( Hoja de datos )
| Número de pieza | LDTD114EET1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTD114EET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IC
PD
Tj
Tstg
50
−10 to +40
500
200
150
−55 to +150
V
V
mA
mW
C
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD114EET1G
LDTD114EET1G
Q5
Q5
10 10 3000/Tape & Reel
10 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
∗ Characteristics of built-in transistor
fT ∗
Min.
−
3
−
−
−
56
7
0.8
−
Typ.
−
−
0.1
−
−
−
10
1
200
Max.
0.5
−
0.3
0.88
0.5
−
13
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 10mA
IO/II= 50mA/2.5mA
VI= 5V
VCC= 50V, VI=0V
VO= 5V, IO= 50mA
−
−
VCE=10V, IE= −50mA, f=100MHz
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTD114EET1G.PDF ] | |
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