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Fairchild Semiconductor - N-Channel UniFETTM FRFET MOSFET

Numéro de référence FDPF18N20FT
Description N-Channel UniFETTM FRFET MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDPF18N20FT fiche technique
FDP18N20F / FDPF18N20FT
N-Channel UniFETTM FRFET® MOSFET
200 V, 18 A, 140 mΩ
November 2013
Features
• RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 24 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS
TO-220
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
FDP18N20F FDPF18N20FT
200
±30
18 18*
10.8 10.8*
72 72*
324
18
10
4.5
100 41
0.83 0.33
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP18N20F
1.2
62.5
FDPF18N20FT
3.0
62.5
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. C1
1
www.fairchildsemi.com

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