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RJK03N1DPA fiches techniques PDF

Renesas Technology - Built in SBD N Channel Power MOS FET

Numéro de référence RJK03N1DPA
Description Built in SBD N Channel Power MOS FET
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK03N1DPA fiche technique
RJK03N1DPA
30V, 45A, 3.0mmax.
Built in SBD N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
Preliminary Datasheet
R07DS0782EJ0200
Rev.2.00
Feb 12, 2013
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
5 678
D DDD
4321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±12
45
180
45
17
29
40
3.13
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0782EJ0200 Rev.2.00
Feb 12, 2013
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