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PDF FDD3672_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDD3672_F085 | |
| Descripción | N-Channel UltraFET Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2011
FDD3672_F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28mΩ
Features
Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A
Typ Qg(10) = 24nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDD3672_F085 Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics
200
100
100us
10
SINGLE PULSE
TJ = MAX RATED
1 TC = 25oC
1ms
OPERATION IN THIS
AREA MAY BE
10ms
LIMITED BY rDS(on)
0.1
DC
1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
300
Figure 5. Forward Bias Safe Operating Area
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
60 VDD = 5V
40
20
0
2.5
TJ = 25oC
TJ = 175oC
TJ = -55oC
3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, GATE TO SOURCE VOLTAGE (V)
6.5
Figure 7. Transfer Characteristics
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
60 VGS = 10V
VGS = 8V
VGS = 7V
VGS = 6V
40 VGS = 5V
20
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
5
100
ID = 44A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80
TJ = 175oC
60
40
TJ = 25oC
20
0
5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.6
-80
ID = 44A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD3672_F085 Rev. C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDD3672_F085.PDF ] | |
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