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Numéro de référence | IRFU4615PBF | ||
Description | Power MOSFETs | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
IRFR4615PbF
IRFU4615PbF
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ.
34m:
max. 42m:
S ID
33A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
DD
S
G
DPak
IRFR4615PbF
S
D
G
IPAK
IRFU4615PbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFR4615PbF
IRFR4615TRLPbF
IRFU4615PbF
Package Type
D-PAK
I-PAK
Standard Pack
Form
Tube/Bulk
Tape and Reel Left
Tube/Bulk
Quantity
75
3000
75
Orderable Part Number
IRFR4615PbF
IRFR4615TRLPbF
IRFU4615PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jJunction-to-Case
iJunction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes through are on page 11
Max.
33
24
140
144
0.96
± 20
38
-55 to + 175
300
109
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2013 International Rectifier
May 16, 2013
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Pages | Pages 11 | ||
Télécharger | [ IRFU4615PBF ] |
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