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PDF LDTA114WET1G Data sheet ( Hoja de datos )
| Número de pieza | LDTA114WET1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities ca.n be achieved.
z We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Supply voltage
Input voltage
Parameter
Output current
Power dissipation
Symbol
VCC
VI
IO
IC(Max.)
PD
Limits
−50
−30 to +10
−100
−100
200
Unit
V
V
mA
mW
Junction temperature
Storage temperature
Tj
Tstg
150
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA114WET1G
L6
10 4.7 3000/Tape & Reel
LDTA114WET3G
L6
10 4.7 10000/Tape & Reel
°C
°C
LDTA114WET1G
3
1
2
SC-89
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
zExternal characteristics (Unit: mm)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
−3
−
−
−
24
7
0.37
−
Typ.
−
−
−0.1
−
−
−
10
0.47
250
Max.
−0.8
−
−0.3
−0.88
−0.5
−
13
0.57
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC= −5V , IO= −100µA
VO= −0.3V , IO= −2mA
IO= −10mA , II= −0.5mA
VI= −5V
VCC= −50V , VI=0V
IO= −10mA , VO= −5V
−
−
VCE= −10V , IE=5mA , f=100MHz
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LDTA114WET1G.PDF ] | |
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