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IRF7815PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7815PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7815PbF fiche technique
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 10V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
PD - 96284
IRF7815PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:150V 43m @VGS = 10V 25nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Max.
150
± 20
5.1
4.1
41
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
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12/01/09

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