FDB8445_F085 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDB8445_F085 | |
| Description | N-Channel PowerTrench MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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October 2010
FDB8445_F085
N-Channel PowerTrench® MOSFET
40V, 70A, 9mΩ
Features
Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A
Typ Qg(10) = 44nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
AD FREE I
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
D
G
S
©2010 Fairchild Semiconductor Corporation
FDB8445_F085 Rev C (W)
1
www.fairchildsemi.com
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Typical Characteristics
1000
10us
100
100us
10
SINGLE PULSE
TJ = MAX RATED
1 TC = 25oC
OPERATION IN THIS
1ms
AREA MAY BE
10ms
0.1 LIMITED BY rDS(on)
1
10
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.01
0.1 1
10 100
tAV, TIME IN AVALANCHE (ms)
400
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
140
PULSE DURATION = 80μs
120 DUTY CYCLE = 0.5% MAX
VDD = 5V
100
80 TJ = 175oC
60
40 TJ = 25oC
20 TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
6.0
140
VGS = 10V
120
100
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 5V
VGS = 4.5V
60
40 VGS = 4V
20
VGS = 3.5V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
20
ID = 70A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
16 TJ = 175oC
12
8
TJ = 25oC
4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.0
PULSE DURATION = 80μs
1.8 DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 70A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8445_F085 Rev C (W)
5
www.fairchildsemi.com
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| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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